Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | TO-92S |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.15 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 70 |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 180 MHz |
| KSA1175-O | KSA1175-G | KSA1175-Y | KSA1175-L | KSA1175-R | |
|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | TO-92S | TO-92S | TO-92S | TO-92S | TO-92S |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Contacts | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.15 A | 0.15 A | 0.15 A | 0.15 A | 0.15 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 70 | 200 | 120 | 350 | 40 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz |
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