KSP44/45
HIGH VOLTAGE TRANSISTOR
•
Collector-Emitter Voltage: V
CEO
=KSP44: 400V
KSP45: 350V
•
Collector Dissipation: P
C
(max)=625mW
NPN EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector Base Voltage
: KST44
: KST45
Collector-Emitter Voltage
: KST44
: KST45
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
A
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
500
400
V
CEO
500
400
6
300
625
1.5
150
-55~150
V
V
V
mA
mW
W
°C
°C
V
V
Rating
Unit
V
EBO
I
C
P
C
P
C
T
J
T
STG
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
: KST44
: KST45
*Collector -Emitter Breakdown Voltage
: KST44
: KST45
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST44
: KST45
Collector Cut-off Current
: KST44
: KST45
Emitter Cut-off Current
*DC Current Gain
Symbol
BV
CBO
Test Conditions
I
C
=100µA, I
B
=0
500
400
BV
CEO
I
C
=1mA, I
B
=0
500
400
6
0.1
0.1
0.5
0.5
0.1
40
50
45
40
200
V
V
V
V
pF
V
V
V
µA
µA
µA
µA
µA
V
V
Min
Max
Unit
BV
EBO
I
CBO
I
E
=100µA, I
C
=0
V
CB
=400V, I
E
=0
V
CB
=320V, I
E
=0
V
CE
=400V, I
B
=0
V
CE
=320V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0
f=1MHz
I
CES
I
EBO
h
FE
*Collector-Emitter Saturation Voltage
V
CE
(sat)
*Base-Emitter Saturation Voltage
Output Capacitance
V
BE
(sat)
C
OB
0.4
0.5
0.75
0.75
7
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Rev. B
©
1999 Fairchild Semiconductor Corporation
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
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supplementary data will be published at a later date.
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