L14P1 L14P2
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.230 (5.84)
0.209 (5.31)
0.195 (4.95)
0.178 (4.52)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
0.100 (2.54)
0.050 (1.27)
2
1
3
Ø0.020 (0.51) 3X
45°
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
BASE 2
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1
EMITTER
DESCRIPTION
The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, T O-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
• Devices can be used as a photodiode by wiring the collector and base leads.
• RoHS compliant
Light in Motion LLC
TR/LiM 09001 31/05/09
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L14P1 L14P2
HERMETIC SILICON PHOTOTRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CEO
V
CBO
V
EBO
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
30
40
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm
equivalent to a tungsten source, at 2870°K, of 10 mW/cm
2
.
2
is approximately
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
(T
A
=25°C) (All measurements made under pulse conditions)
SYMBOL
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14P1
On-State Collector Current L14P2
On-State Photodiode Current
Rise Time
Fall Time
Saturation Voltage L14P1
Saturation Voltage L14P2
I
C
= 10 mA, Ee = 0
I
E
= 100
µA,
Ee = 0
I
C
= 100
µA,
Ee = 0
V
CE
= 12 V, Ee = 0
Ee = 0.5
V
CE
= 5
2
, V = 5 V
(7,8)
Ee = 0.5 mW/cm
CE
Ee = 0.3 mW/cm
2
, V
CB
= 5 V
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
Ω
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
Ω
I
C
= 0.8 mA, Ee = 0.6 mW/cm
2(7,8)
I
C
= 1.6 mA, Ee = 0.6 mW/cm
2(7,8)
mW/cm
2
,
V
(7,8)
TEST CONDITIONS
BV
CEO
BV
EBO
BV
CBO
I
CEO
θ
I
C(ON)
I
C(ON)
I
CB(ON)
t
r
t
f
V
CE(SAT)
V
CE(SAT)
MIN
30
5.0
40
—
TYP
MAX
—
—
—
100
—
±8
6.5
13.0
6.0
10
12
—
—
0.40
0.40
V
V
V
nA
Degrees
mA
mA
µA
µs
µs
V
V
UNITS
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L14P1 L14P2
HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
8
6
4
I
L
, NORMALIZED LIGHT CURRENT
2
1
.8
.6
.4
.2
.1
.08
.06
.04
.02
.01
.01
.02
.04 .06 .08 .1
.2
.4 .6 .8 1
2
4
6 8 10
20
Ee = 0.2 mW/cm
2
Ee = 0.1 mW/cm
2
NORMALIZED TO:
Ee = 1 mW/cm
2
V
CE
= 5 V
T
A
= 25°C
PULSED
t
p
= 300
µsec
Ee = 10 mW/cm
2
Ee = 2 mW/cm
2
Ee = 1 mW/cm
2
Ee = 20 mW/cm
2
I
L
, NORMALIZED LIGHT CURRENT
4
2
1
.8
.6
.4
.2
.1
.08
.06
.04
.02
.01
.1
Figure 2. Light Current vs.
Total Irradiance
Ee = 5 mW/cm
2
Ee = 0.5 mW/cm
2
NORMALIZED TO:
V
CE
= 5 V
Ee = 1 mW/cm
2
T
A
= 25°C
PULSED
t
p
= 300
µsec
.2
.4
.6 .8 1
2
4
6 8 10
20
E
e
- TOTAL IRRADIANCE IN mW/cm
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. Light Current vs. Temperature
4
IF = 50 mA
Figure 3. Dark Current vs. Temperature
10
5
I
L
, NORMALIZED LIGHT CURRENT
10
4
10
3
10
2
2
20 mA
10 mA
5 mA
I
CEO
, NORMLIZED DARK CURRENT
NORMALIZED TO:
T
A
= 25°C
V
CE
= 10 V
1
.8
.6
.4
2 mA
.2
1 mA
.1
.08
.06
.04
.02
10
1
0.5 mA
0.1
0
10
20
30
40
50
60
70
80
90
100
.01
NORMALIZED TO: IF = 5 mA, V
CE
= 5 V, T
A
= 25°C
PULSED: G
A
A
S
SOURCE (1N6265), tp = 300
µsec,
T
J
= T
A
-50
-26
0
26
50
75
100
T
A
, TEMPERATURE (°C)
T
A
, TEMPERATURE (°C)
Figure 5. Angular and Spectral Response
110
100
90
RELATIVE OUTPUT (%)
80
60
60
50
40
30
20
10
-40
-20
0
20
1
.9
RELATIVE RESPONSE
.8
.7
.6
.5
.4
.3
.2
.1
40 500 600 700 800 900 1000 1100
λ,
WAVE LENGTH
(NANOMETERS)
tr and tf, NORMALIZED SWITCHING LIGHT SPEED
100
80
60
40
20
10
8
6
4
2
1
.8
.6
.4
.2
.1
.1
R
L
= 100
Ω
Figure 6. Switching Speed vs. Bias
R
L
= 1000
Ω
R
L
= 500
Ω
R
L
= 250
Ω
R
L
= 1000
Ω
R
L
= 500
Ω
R
L
= 250
Ω
R
L
= 100
Ω
θ,
ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
NORMALIZED TO:
V
CC
= 5 V
I
C
= 10 mA
R
L
= 100
Ω
T
A
= 25°C
.2
.4 .6 .8 1
R
L
= 50
Ω
NORMALIZED TO:
V
CC
= 5 V
I
C
= 10 mA
R
L
= 100
Ω
T
A
= 25°C
8 10 .1
.2
.4 .6 .8 1
R
L
= 50
Ω
2
4
2
4
6 8 10
RISE TIME
I
CE
, OUTPUT CURRENT (mA)
FALL TIME
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L14P1 L14P2
HERMETIC SILICON PHOTOTRANSISTOR
DISCLAIMER
LIGHT IN MOTION LLC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. LIGHT IN MOTION DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE
RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
LIGHT IN MOTION’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF THE PRESIDENT OF
LIGHT IN MOTION LLC. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to af fect its safety or
effectiveness.
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