DRA2TG datasheet, PDF - EEWORLD Datasheet

DRA2TG: DescriptionSILICON CONTROLLED RECTIFIER,600V V(DRM),2A I(T),TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size29KB，1 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DRA2TG Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),2A I(T),TO-202

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Critical rise rate of minimum off-state voltage	15 V/us
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	3 mA
Maximum leakage current	0.2 mA
On-state non-repetitive peak current	20 A
Maximum on-state voltage	2 V
Maximum on-state current	2000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

	DRA2TG	DRA2TE
Description	SILICON CONTROLLED RECTIFIER,600V V(DRM),2A I(T),TO-202	SILICON CONTROLLED RECTIFIER,400V V(DRM),2A I(T),TO-202
Maker	ON Semiconductor	ON Semiconductor
Reach Compliance Code	compliant	compliant
Critical rise rate of minimum off-state voltage	15 V/us	15 V/us
Maximum DC gate trigger current	0.2 mA	0.2 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V
Maximum holding current	3 mA	3 mA
Maximum leakage current	0.2 mA	0.2 mA
On-state non-repetitive peak current	20 A	20 A
Maximum on-state voltage	2 V	2 V
Maximum on-state current	2000 A	2000 A
Maximum operating temperature	110 °C	110 °C
Minimum operating temperature	-40 °C	-40 °C
Off-state repetitive peak voltage	600 V	400 V
surface mount	NO	NO
Trigger device type	SCR	SCR

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