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DBB04G

Description
Bridge Rectifier Diode, 1 Phase, 0.4A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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Bridge Rectifier Diode, 1 Phase, 0.4A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4

DBB04G Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDIP-T4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current0.4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Ordering number :EN2793A
DBB04
Diffused Junction Silicon Diode
0.4A Single-Phase Bridge Rectifier
Features
· Single-phase bridge rectifier use.
· Plastic molded structure.
· Peak reverse voltage:V
RM
=200, 600V.
· Average rectified current:I
O
=0.4A.
Package Dimensions
unit:mm
1205
[DBB04]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
DBB04C
200
DBB04G
600
0.4
30
150
–40 to +150
Unit
V
A
A
Ta=40˚C
50Hz sine wave, 1cycle
˚C
˚C
Electrical Characteristics
at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
IF=0.2A
VR:At each VRM
Conditions
Ratings
min
typ
max
1.05
10
Unit
V
μ
A
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62096GI (KOTO)/N098TA, TS No.2793-1/2
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