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M93C86-RMN1T

Description
1KX16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
Categorystorage    storage   
File Size147KB,19 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

M93C86-RMN1T Overview

1KX16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

M93C86-RMN1T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.150 INCH, PLASTIC, SO-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Spare memory width8
Maximum clock frequency (fCLK)0.5 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density16384 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count1024 words
character code1000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply2/3.3 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeMICROWIRE
Maximum standby current0.000005 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
Maximum write cycle time (tWC)10 ms
write protectSOFTWARE
M93C86, M93C76, M93C66
M93C56, M93C46, M93C06
16K/8K/4K/2K/1K/256 (x8/x16) Serial Microwire Bus EEPROM
INDUSTRY STANDARD MICROWIRE BUS
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: by WORD (x16) or by
BYTE (x8)
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for M93Cx6 version
– 2.5V to 5.5V for M93Cx6-W version
– 1.8V to 3.6V for M93Cx6-R version
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH-UP
PERFORMANCES
DESCRIPTION
This M93C86/C76/C66/C56/C46/C06 specifica-
tion covers a range of 16K/8K/4K/2K/1K/256 bit
serial EEPROM products respectively. In this text,
products are referred to as M93Cx6. The M93Cx6
is an Electrically Erasable Programmable Memory
(EEPROM) fabricated with STMicroelectronics’s
High Endurance Single Polysilicon CMOS technol-
ogy. The M93Cx6 memory is accessed through a
serial input (D) and output (Q) using the MI-
CROWIRE bus protocol.
Table 1. Signal Names
S
D
Q
C
ORG
V
CC
V
SS
February 1999
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Organisation Select
Supply Voltage
Ground
8
1
PSDIP8 (BN)
0.25mm Frame
8
1
SO8 (MN)
150mil Width
8
1
TSSOP8 (DW)
169mil Width
Figure 1. Logic Diagram
VCC
D
C
M93Cx6
S
ORG
Q
VSS
AI01928
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