EEWORLDEEWORLDEEWORLD

Part Number

Search

DBF60C

Description
Bridge Rectifier Diode, 1 Phase, 2.8A, 200V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size80KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DBF60C Overview

Bridge Rectifier Diode, 1 Phase, 2.8A, 200V V(RRM), Silicon

DBF60C Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PSFM-T4
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current120 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current2.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Ordering number:EN2799A
DBF60
Silicon Diffused Junction Type
6.0A Single-Phase Bridge Rectifier
Features
· Glass passivation for high reliability.
· Plastic molded structure.
· Peak reverse voltage:V
RM
=200, 600V.
· Average rectified current:I
O
=6.0A.
Package Dimensions
unit:mm
1191
[DBF60]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
V RM
IO
IFSM
Tj
Tstg
Conditions
DBF60C
200
DBF60G
600
6
2.8
120
150
Unit
V
A
A
A
Tc=110˚C, with 125×125×1.5mm AI fin
Ta=25˚C, without fin
50Hz sine wave, 1 cycle
3
˚C
˚C
–40 to +150
Electrical Characteristics
at Ta = 25˚C, per constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
VF
IR
Rth(j-a)
Rth(j-c)
IF=2.5A
VR:At each VRM
Without fin
With AI fin
Conditions
Ratings
min
typ
max
1.05
10
26
3.4
Unit
V
μ
A
˚C/W
˚C/W
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA(KT)71095GI(KOTO) 5108TA, TS 8-2226 No.2799-1/2

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2444  2616  2220  2714  357  50  53  45  55  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号