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DBA150G

Description
Bridge Rectifier Diode, 1 Phase, 4.5A, 600V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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DBA150G Overview

Bridge Rectifier Diode, 1 Phase, 4.5A, 600V V(RRM), Silicon

DBA150G Parametric

Parameter NameAttribute value
MakerSANYO
package instructionS-PUFM-D4
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeS-PUFM-D4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current4.5 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Ordering number : ENN2222C
DBA150
Diffused Junction Silicon Diode
DBA150
15.0A Single-Phase Bridge Rectifier
Features
Package Dimensions
unit : mm
1170
[DBA150]
Plastic molded structure.
Glass passivation for high reliability.
Peak reverse voltage : VRM=200, 600V.
Average rectified current : IO=15A.
9
7.2
6.35
4.5
0.8
14.4
26.5 max
11
25 max
DBA150C
200
26.5 max
18
2.4
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Insulation Voltage
Symbol
VRM
IO
IFSM
Tj
Tstg
VIS
Conditions
Ta=40°C
Ta=40°C, with a 270✕270✕3.0mm
3
Cu fin
50Hz sine wave, 1 cycle
DBA150G
600
4.5
15.0
200
150
--40 to +150
2
Unit
V
A
A
A
°C
°C
kV
Electrical Characteristics
at Ta=25
°
C
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Note : Tightening torque : 0.98N·m max.
Note
: Per constituent element of bridge.
Symbol
VF
IR
Rth(j-c)
Conditions
IF=7.5A
VR : At each VRM
Junction-Case
min
Ratings
typ
max
1.05
10
2.3
Unit
V
μA
°C/W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / 82595 GI (KOTO) 3019 TA, TS No.2222-1/2
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