Ordering number :EN2800B
DD50R
Diffused Junction Type Sillicon Diode
Ultrahigh-Difinition Display Diode
Features
· High breakdown voltage (VRRM : 1500V) .
· High reliability.
· Capable of being mounted easily and dissipating heat
rapidly because of one-point fixing type plastic
molded package.
· Fast forward / reverse recovery time.
Package Dimensions
unit:mm
1185A
[DD50R]
1:Anode
2:Cathode
3:Anode
SANYO:TOP3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Peak Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IOP
IFSM
Tj
Tstg
PW
≤
100µs, duty
≤
50%
50Hz sine wave, 1 cycle
Conditions
Ratings
1500
1500
5
20
50
150
–55 to +150
Unit
V
V
A
A
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Forward Recovery Time
Junction Capacitance
Thermal Resistance
Symbol
VR
VF
IR
trr
tfr
Cj
Rth(j-c)
IR=1mA
IF=5A
VR=1000V
IF=IR=100mA
IF=100mA
VR=10V, f=100KHz
Junction-Case
0.1
90
1.25
Conditions
Ratings
min
1500
2
200
1
0.2
typ
max
Unit
V
V
µA
µs
µs
pF
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32398GI/92995GI (KOTO) /4088TA, TS No.2800-1/2
DD50R
5
3
2
IF — VF
C
Forward Current, IF — A
10
5
3
2
Ta
2
=1
0˚
Junction Capacitance, Cj — pF
75˚C
25˚C
5
3
2
Cj — VR
f=100kHz
100
7
5
3
2
1.0
5
3
2
10
7
0.1
5
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
5
1.0
2
3
5
7
10
2
3
5
7 100
2
Forward Voltage, VF — V
70
Reverse Voltage, VR — V
IFSM — t
Thermal Resistance, Rth(j-C) — ˚C/W
Rth(j-C) — t
5
Surge Forward Current, IFSM(peak) — A
Current waveform 50Hz sine wave
60
IS
50
20ms
40
t
Tc=25˚C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1 2 3
5
1.0
2 3
5
10
2 3
5
100
2 3
5 1000
30
20
10
0
0.01
2
3
5
7
0.1
2
3
5
7 1.0
2
3
Time, t — s
Time, t — ms
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of March, 1998. Specifications and information herein are subject to
change without notice.
PS No.2800-2/2
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