2PG352 datasheet, PDF - EEWORLD Datasheet

2PG352: DescriptionInsulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size29KB，1 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, IPAK-3

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	16 V
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	550 ns
Nominal on time (ton)	35 ns
Base Number Matches	1

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