2MI100F025 datasheet, PDF - EEWORLD Datasheet

2MI100F025: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size316KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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2MI100F025 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	100 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	400 W
surface mount	NO
Base Number Matches	1

	2MI100F025	2MI100F050	6MI15FS050	6MI20FS025
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Reach Compliance Code	unknow	unknow	unknown	unknown
Configuration	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	100 A	100 A	15 A	20 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	400 W	400 W	60 W	40 W
surface mount	NO	NO	NO	NO
Base Number Matches	1	1	1	1

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