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2N5088, 2N5089
Amplifier Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
2N5088
2N5089
Collector − Base Voltage
2N5088
2N5089
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
35
30
3.0
50
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
1
2
3
Symbol
V
CEO
30
25
Vdc
Value
Unit
Vdc
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3 COLLECTOR
2
BASE
1 EMITTER
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 1
2N
508x
AYWW
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2N508x = Device Code
x = 8 or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
qJA
is measured with the device soldered into a typical printed circuit board.
ORDERING INFORMATION
Device
2N5088
2N5088G
2N5088RLRA
2N5088RLRAG
2N5089
2N5089G
2N2089RLRA
2N2089RLRAG
2N2089RLRE
2N2089RLREG
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Units/Box
5000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
5000 Units/Box
5000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
2000/Tape & Reel
2000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5088/D
1
March, 2006 − Rev. 3
2N5088, 2N5089
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 15 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB(off)
= 3.0 Vdc, I
C
= 0)
(V
EB(off)
= 4.5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) (Note 2)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Base −Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) (Note 2)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 500
mAdc,
V
CE
= 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter−Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2N5088
2N5089
NF
2N5088
2N5089
−
−
3.0
2.0
f
T
C
cb
C
eb
h
fe
350
450
1400
1800
dB
50
−
−
−
4.0
10
MHz
pF
pF
−
h
FE
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
V
CE(sat)
V
BE(on)
300
400
350
450
300
400
−
−
900
1200
−
−
−
−
0.5
0.8
Vdc
Vdc
−
V
(BR)CEO
2N5088
2N5089
V
(BR)CBO
2N5088
2N5089
I
CBO
2N5088
2N5089
I
EBO
−
−
50
100
−
−
50
50
nAdc
35
30
−
−
nAdc
30
25
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
R
S
e
n
i
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
2N5088, 2N5089
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
en , NOISE VOLTAGE (nV)
I
C
= 10 mA
3.0 mA
1.0 mA
en , NOISE VOLTAGE (nV)
R
S
≈
0
20
R
S
≈
0
f = 10 Hz
100 Hz
10 kHz
5.0
30
BANDWIDTH = 1.0 Hz
10
7.0
5.0
10
7.0
1.0 kHz
300
mA
3.0
10
20
50 100 200
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
3.0
0.01 0.02
0.05 0.1
0.2
0.5 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
100 kHz
5.0
10
Figure 2. Effects of Frequency
10
7.0
5.0
In, NOISE CURRENT (pA)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
R
S
≈
0
10
20
10
mA
50 100 200
3.0 mA
1.0 mA
300
mA
100
mA
30
mA
0
10
20
20
16
NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12
500
mA
100
mA
4.0
10
mA
I
C
= 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
VT, TOTAL NOISE VOLTAGE (nV)
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
20
BANDWIDTH = 1.0 Hz
100
mA
3.0 mA
1.0 mA
300
mA
30
mA
10
mA
I
C
= 10 mA
NF, NOISE FIGURE (dB)
16
12
8.0
Figure 5. Wideband Noise Figure
I
C
= 10 mA
3.0 mA
1.0 mA
300
mA
100
mA
4.0
BANDWIDTH = 1.0 Hz
0
10
20
30
mA
10
mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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3
2N5088, 2N5089
h FE, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
V
CE
= 5.0 V
2.0
T
A
= 125°C
25°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
−55
°C
0.02
0.03
0.05
0.1
0.2
0.3
0.5
I
C
, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
R
θ
VBE, BASE−EMITTER
TEMPERATURE COEFFICIENT (mV/
°
C)
−0.4
−0.8
0.6
V
BE
@ V
CE
= 5.0 V
−1.2
T
J
= 25°C to 125°C
0.4
−1.6
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
−2.0
−55
°C
to 25°C
20
50 100
50
100
−2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
BANDWIDTH PRODUCT (MHz)
Figure 10. Temperature Coefficients
8.0
6.0
C, CAPACITANCE (pF)
4.0
3.0
2.0
C
ob
C
cb
C
eb
C
ib
T
J
= 25°C
500
300
200
f T, CURRENT−GAIN
100
70
50
V
CE
= 5.0 V
T
J
= 25°C
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50 70 100
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
Figure 12. Current−Gain — Bandwidth Product
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