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DSF10TJ

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size21KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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DSF10TJ Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2

DSF10TJ Parametric

Parameter NameAttribute value
MakerSANYO
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Ordering number : ENN2523B
DSF10T
DSF10T
Features
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
Meets automatic mounting requirements.
Plastic molded structure (small size).
Peak reverse voltage : VRM=100 to 1000V.
Average rectified current : IO=1.0A.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Symbol
VRM
IO
IFSM
Tj
Tstg
Ta=25°C
50Hz sine wave, 1cycle
45
150
--40 to +150
Conditions
DSF10TG
600
1.0
30
Ta=25°C
50Hz sine wave, 1cycle
Conditions
DSF10TB
100
1.0
45
150
--40 to +150
DSF10TJ
800
DSF10TL
1000
DSF10TC
200
DSF10TE
400
Unit
V
A
A
°C
°C
Unit
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Conditions
IF=1.0A
VR : At each VRM
Ratings
min
typ
max
1.0
10
Unit
V
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005 TS IM TB-00000643 / 53098 HA (KT) / 92995GI (KOTO) / 5178TA, TS No.2523-1/3

DSF10TJ Related Products

DSF10TJ DSF10TL
Description Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-2
Maker SANYO SANYO
package instruction O-PALF-W2 O-PALF-W2
Contacts 2 2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 30 A 30 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 1000 V
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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