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2N5957

Description
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

2N5957 Parametric

Parameter NameAttribute value
Objectid8059220492
package instructionPOST/STUD MOUNT, O-MUPM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-X3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
This Material Copyrighted By Its Respective Manufacturer
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Index Files: 218  2820  2609  1763  2353  5  57  53  36  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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