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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N5088
2N5089
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5088
30
35
3.0
50
625
5.0
1.5
12
– 55 to +150
2N5089
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
1. R
θJA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
V(BR)CEO
2N5088
2N5089
V(BR)CBO
2N5088
2N5089
ICBO
2N5088
2N5089
IEBO
—
—
50
100
—
—
50
50
nAdc
35
30
—
—
nAdc
30
25
—
—
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–47
2N5088 2N5089
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
µAdc,
VCE = 5.0 Vdc)
hFE
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
VCE(sat)
VBE(on)
300
400
350
450
300
400
—
—
900
1200
—
—
—
—
0.5
0.8
Vdc
Vdc
—
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500
µAdc,
VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100
µAdc,
VCE = 5.0 Vdc, RS = 1.0 kΩ,
f = 1.0 kHz)
2. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2N5088
2N5089
NF
2N5088
2N5089
—
—
3.0
2.0
fT
Ccb
Ceb
hfe
350
450
1400
1800
dB
50
—
—
—
4.0
10
MHz
pF
pF
—
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2–48
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
IC = 10 mA
3.0 mA
1.0 mA
RS
≈
0
20
RS
≈
0
f = 10 Hz
10
7.0
10 kHz
5.0
1.0 kHz
100 Hz
30
BANDWIDTH = 1.0 Hz
10
7.0
5.0
300
µA
3.0
10
20
50 100 200
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
3.0
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
100 kHz
5.0
10
Figure 2. Effects of Frequency
10
7.0
5.0
In, NOISE CURRENT (pA)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
RS
≈
0
20
10
µA
50 100 200
3.0 mA
1.0 mA
300
µA
100
µA
30
µA
0
10
20
20
16
NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
IC = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12
500
µA
100
µA
4.0
10
µA
IC = 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
VT, TOTAL NOISE VOLTAGE (nV)
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
20
BANDWIDTH = 1.0 Hz
100
µA
3.0 mA
1.0 mA
300
µA
30
µA
10
µA
IC = 10 mA
16
NF, NOISE FIGURE (dB)
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA
1.0 mA
300
µA
12
8.0
100
µA
4.0
BANDWIDTH = 1.0 Hz
0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
30
µA
10
µA
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–49
2N5088 2N5089
h FE, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
– 55°C
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
R
θ
VBE, BASE–EMITTER
TEMPERATURE COEFFICIENT (mV/
°
C)
– 0.4
– 0.8
0.6
VBE @ VCE = 5.0 V
– 1.2
0.4
– 1.6
TJ = 25°C to 125°C
0.2
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
100
– 2.0
– 55°C to 25°C
– 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 10. Temperature Coefficients
8.0
6.0
C, CAPACITANCE (pF)
4.0
3.0
2.0
Cob
Ccb
Ceb
Cib
TJ = 25°C
500
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
VCE = 5.0 V
TJ = 25°C
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
2–50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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