2N5957E3 datasheet, PDF - EEWORLD Datasheet

2N5957E3: DescriptionPower Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N5957E3 Overview

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

Parameter Name	Attribute value
Objectid	8059220492
package instruction	POST/STUD MOUNT, O-MUPM-X3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-61
JESD-30 code	O-MUPM-X3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON

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