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2N5958

Description
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size272KB,5 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

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2N5958 Overview

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,

2N5958 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment100 W
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max0.9 V
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