RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP,
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, O-CRFM-F4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 6 A |
| Collector-based maximum capacity | 400 pF |
| Collector-emitter maximum voltage | 18 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JESD-30 code | O-CRFM-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 60 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
