Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-57, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-57 |
| package instruction | TO-57, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JESD-30 code | O-MBPM-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 40 W |
| Maximum power dissipation(Abs) | 1 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 0.09 MHz |
| VCEsat-Max | 7.5 V |
| Base Number Matches | 1 |
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