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2N1067

Description
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size43KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

2N1067 Overview

Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin,

2N1067 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-8
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment5 W
Maximum power dissipation(Abs)5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)0.75 MHz
VCEsat-Max2 V
Base Number Matches1
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