FMMT5179 datasheet, PDF - EEWORLD Datasheet

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FMMT5179: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size92KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FMMT5179 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

FMMT5179 Parametric

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	900 MHz

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SOT23 NPN SILICON PLANAR

HIGH FREQUENCY TRANSISTOR

ISSUE 3 - JANUARY 1996

FEATURES

* High f

=900MHz Min

* Max capacitance=1pF

* Low noise 4.5dB

PARTMARKING DETAIL - 179

FMMT5179

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature Range

PARAMETER

Collector-Emitter Sustaining

Voltage

Collector-Base Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

Static Forward Current

Transfer Ratio

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Transition Frequency

Collector-Base Capacitance

Small Signal Current Gain

Noise Figure

Common-Emitter Amplifier

Power Gain

SYMBOL

CEO(SUS)

(BR)CBO

(BR)EBO

CBO

CE(sat)

BE(sat)

Gpe

900

MIN.

2.5

0.02

1.0

250

0.4

1.0

2000

300

4.5

MHz

SYMBOL

CBO

CEO

EBO

tot

stg

MAX.

VALUE

2.5

330

-55 to +150

SOT23

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

UNIT CONDITIONS.

= 3mA, I

= 1

A, I

=10

A, I

=15V, I

=0, T

amb

=150°C

=3mA, V

=1V

=10mA, I

=1mA

=10mA, I

=1mA

=5mA, V

=6V, f=100MHz

=0, V

=10V, f=1MHz

=2mA, V

=6V, f=1KHz

=2mA, V

=6V, f=31.9MHz

=1.5mA, V

=6V

=50

Ω

, f=200MHz

=5mA, V

=6V

f=200MHz

Collector Base Time Constant rbC

Spice parameter data is available upon request for this device

3 - 169

FMMT5179 Related Products

	FMMT5179	FMMT5179TA	FMMT5179TC
Description	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN	trans RF npn 12v 50ma sot23-3	TRANSISTOR RF NPN SOT23-3

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