RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Zetex Semiconductors |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1 pF |
| Collector-emitter maximum voltage | 12 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Minimum power gain (Gp) | 15 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 900 MHz |
| VCEsat-Max | 0.4 V |
| UFMMT5179 | UFMMT5179TA | UFMMT5179TC | |
|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| Reach Compliance Code | unknown | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.05 A | 0.05 A | 0.05 A |
| Collector-based maximum capacity | 1 pF | 1 pF | 1 pF |
| Collector-emitter maximum voltage | 12 V | 12 V | 12 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 25 | 25 |
| highest frequency band | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN |
| Minimum power gain (Gp) | 15 dB | 15 dB | 15 dB |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | MATTE TIN | MATTE TIN |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 | 40 |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 900 MHz | 900 MHz | 900 MHz |
| VCEsat-Max | 0.4 V | 0.4 V | 0.4 V |
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