TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | , |
| Reach Compliance Code | compli |
| Maximum collector current (IC) | 0.1 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 15 |
| JESD-609 code | e0 |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.62 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 150 MHz |
| Base Number Matches | 1 |
| 2N5127 | 2N5219 | 2N5223 | 2N3859 | MPSA10 | MPS6565 | PN3694 | PN5127 | MPS6564 | PN5131 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,15V V(BR)CEO,100MA I(C),TO-18 | TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),TO-98 | TRANSISTOR,BJT,NPN,40V V(BR)CEO,200MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,30MA I(C),TO-92 | TRANSISTOR,BJT,NPN,12V V(BR)CEO,30MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),TO-92 | TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),TO-92 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compli | compli | unknow | unknown | compliant | unknown | unknow | compli | compli | compli |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.2 A | 0.2 A | 0.03 A | 0.03 A | 0.2 A | 0.2 A |
| Configuration | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.62 W | 0.62 W | 0.62 W | 0.62 W | 0.3 W | 0.62 W | 0.6 W | 0.6 W | 0.62 W | 0.625 W |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 90 MHz | 125 MHz | 200 MHz | 200 MHz | 150 MHz | 100 MHz | 100 MHz |
| Minimum DC current gain (hFE) | 15 | 35 | 50 | 100 | 40 | 40 | 100 | - | 25 | - |
| Maker | - | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |