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DDTC115GUA-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size81KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTC115GUA-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

DDTC115GUA-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)82
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SPICE MODELS: DDTC114GUA DDTC124GUA DDTC144GUA DDTC115GUA
DDTC
(R2-ONLY SERIES)
UA
NPN PRE-BIASED SMALL SIGNAL SOT-323
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTA)
Built-In Biasing Resistor, R2 only
Available in Lead Free/RoHS Compliant Version (Note 2)
B
A
C
SOT-323
Dim
B C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
A
B
C
D
M
E
G
H
Mechanical Data
·
·
·
·
·
·
·
·
·
·
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Marking: Date Code and Type Code, See Page 2
Ordering Information (See Page 2)
Type Code: See Table Below
Weight: 0.006 grams (approximate)
P/N
DDTC114GUA
DDTC124GUA
DDTC144GUA
DDTC115GUA
R2 (NOM)
10KW
22KW
47KW
100KW
Type Code
N26
N27
N28
N29
K
0.65 Nominal
E
G
H
J
K
L
M
J
D
F
L
C
B
a
All Dimensions in mm
R
2
E
SCHEMATIC DIAGRAM
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
Value
50
50
5
100
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30324 Rev. 4 - 1
1 of 3
www.diodes.com
DDTC (R2-ONLY SERIES) UA
ã
Diodes Incorporated

DDTC115GUA-13 Related Products

DDTC115GUA-13 DDTC144GUA-13 DDTC114GUA-13 DDTC124GUA-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Diodes Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 82 68 30 56
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
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