2N6331 datasheet, PDF - EEWORLD Datasheet

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2N6331: DescriptionPower Bipolar Transistor, 30A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6331 Overview

Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N6331 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	100 V
Configuration	Single
Minimum DC current gain (hFE)	6
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	114 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

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2N6331 Related Products

	2N6331	2N4903	2N6246	2N6247	2N5883	2N4901
Description	Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compli	compli	unknown	compli	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	30 A	5 A	5 A	15 A	25 A	5 A
Collector-emitter maximum voltage	100 V	80 V	60 V	80 V	60 V	40 V
Minimum DC current gain (hFE)	6	20	20	20	20	20
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of terminals	2	2	2	2	2	2
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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