DDTC143TUA-13 datasheet, PDF - EEWORLD Datasheet

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DDTC143TUA-13: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size80KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DDTC143TUA-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

DDTC143TUA-13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Diodes
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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SPICE MODELS: DDTC113TUA DDTC123TUA DDTC143TUA DDTC114TUA DDTC124TUA DDTC144TUA DDTC115TUA DDTC125TUA

DDTC

(R1-ONLY SERIES)

NPN PRE-BIASED SMALL SIGNAL SOT-323

SURFACE MOUNT TRANSISTOR

Features

Epitaxial Planar Die Construction

Complementary PNP Types Available (DDTA)

Built-In Biasing Resistor, R1 only

Available in Lead Free/RoHS Compliant Version (Note 2)

B C

SOT-323

Dim

Min

0.25

1.15

2.00

0.30

1.20

1.80

0.0

0.90

0.25

0.10

0°

Max

0.40

1.35

2.20

0.40

1.40

2.20

0.10

1.00

0.40

0.18

8°

Mechanical Data

Case: SOT-323

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Solderable per MIL-STD-202, Method 208

Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 4, on Page 2

Marking: Date Code and Type Code (See Diagrams &

Page 2)

Type Code: See Table Below

Ordering Information (See Page 2)

Weight: 0.006 grams (approximate)

P/N

DDTC113TUA

DDTC123TUA

DDTC143TUA

DDTC114TUA

DDTC124TUA

DDTC144TUA

DDTC115TUA

DDTC125TUA

R1 (NOM)

1KW

2.2KW

4.7KW

10KW

22KW

47KW

100KW

200KW

Type Code

N01

N03

N07

N12

N16

N19

N23

N25

0.65 Nominal

All Dimensions in mm

SCHEMATIC DIAGRAM

Maximum Ratings

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

@ T

= 25°C unless otherwise specified

Symbol

CBO

CEO

EBO

(Max)

qJA

, T

STG

Value

100

200

833

-55 to +150

Unit

°C/W

°C

Characteristic

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage and Temperature Range

Note:

1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS30323 Rev. 5 - 2

1 of 3

www.diodes.com

DDTC (R1-ONLY SERIES) UA

Diodes Incorporated

DDTC143TUA-13 Related Products

	DDTC143TUA-13	DDTC115TUA-13	DDTC144TUA-13	DDTC114TUA-13
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Diodes	Diodes	Diodes	Diodes
package instruction	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235	235	235	235
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz

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