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DDTA143TE-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size83KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTA143TE-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

DDTA143TE-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SPICE MODELS: DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE
DDTA
(R1-ONLY SERIES)
E
PNP PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTC)
Built-In Biasing Resistor, R1 only
Available in Lead Free/RoHS Compliant Version
(Note 2)
B
A
C
SOT-523
Dim
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
B C
E
TOP VIEW
A
B
C
D
G
H
J
K
L
M
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams
& Page 2)
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
K
G
H
M
N
J
D
L
R
1
B
C
N
a
All Dimensions in mm
E
P/N
DDTA113TE
DDTA123TE
DDTA143TE
DDTA114TE
DDTA124TE
DDTA144TE
DDTA115TE
DDTA125TE
R1 (NOM)
1KW
2.2KW
4.7KW
10KW
22KW
47KW
100KW
200KW
MARKING
P01
P03
P07
P12
P16
P19
P23
P25
SCHEMATIC DIAGRAM
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
Value
-50
-50
-5
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30319 Rev. 4 - 2
1 of 3
www.diodes.com
DDTA (R1-ONLY SERIES) E
ã
Diodes Incorporated

DDTA143TE-13 Related Products

DDTA143TE-13 DDTA113TE-13 DDTA125TE-13 DDTA124TE-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Diodes Diodes Diodes Diodes
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
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