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DDTC143FE-13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size89KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTC143FE-13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

DDTC143FE-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.68
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SPICE MODELS: DDTC113ZE DDTC123YE DDTC123JE DDTC143XE DDTC143FE DDTC143ZE DDTC114YE DDTC114WE
DDTC124XE DDTC144VE DDTC144WE
DDTC
(R1¹R2 SERIES)
E
NPN PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available
(DDTA)
Built-In Biasing Resistors, R1¹R2
Available in Lead Free/RoHS Compliant Version (Note 2)
TOP VIEW
IN
G
H
K
M
B C
GND
A
OUT
NEW PRODUCT
SOT-523
Dim
A
B
C
D
N
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 3)
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
P/N
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
R1
(NOM)
1KW
2.2KW
2.2KW
4.7KW
4.7KW
4.7KW
10KW
10KW
22KW
47KW
47KW
R2
(NOM)
10KW
10KW
47KW
10KW
22KW
47KW
47KW
4.7KW
47KW
10KW
22KW
MARKING
N02
N05
N06
N09
N10
N11
N14
N15
N18
N21
N22
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
G
H
J
K
L
J
D
L
IN
R
1
R
2
OUT
M
N
a
All Dimensions in mm
GND
IN
GND
SCHEMATIC DIAGRAM
OUT
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
All
Value
50
-5 to +10
-5 to +12
-5 to +12
-7 to +20
-6 to +30
-5 to +30
-6 to +40
-10 to +30
-10 to +40
-15 to +40
-10 to +40
100
100
100
100
100
100
70
100
50
30
30
100
150
833
-55 to +150
Unit
V
Characteristic
V
IN
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
mA
mW
°C/W
°C
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30314 Rev. 6 - 2
1 of 4
www.diodes.com
DDTC (R1¹R2 SERIES) E
ã
Diodes Incorporated

DDTC143FE-13 Related Products

DDTC143FE-13 DDTC144VE-13 DDTC123JE-13 DDTC143XE-13 DDTC114YE-13 DDTC123YE-13 DDTC113ZE-13
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Diodes Diodes Diodes Diodes Diodes Diodes Diodes
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.68 BUILT-IN BIAS RESISTOR RATIO IS 0.21 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.55 BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC) 0.1 A 0.03 A 0.1 A 0.1 A 0.07 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 68 33 80 30 68 33 33
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Humidity sensitivity level 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 235 235 235 235 235 235
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal surface Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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