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2N7312R

Description
4A, 200V, 1.32ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size144KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2N7312R Overview

4A, 200V, 1.32ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

2N7312R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance1.32 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)163 ns
Maximum opening time (tons)206 ns
Base Number Matches1
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