DTC114TUAP datasheet, PDF - EEWORLD Datasheet

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DTC114TUAP: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size805KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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DTC114TUAP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

DTC114TUAP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SOT323
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

DTC114TUA

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making

device design easy

NPN Digital Transistor

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current-Continuous

Collector Dissipation

Junction Temperature

Storage Temperature Range

SOT-323

A

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Value

50

5

100

200

150

-55~150

Unit

V

mA

mW

℃

G

F

D

3

B

1

E

2

C

1: Base

2: Emitter

3: Collector

H

J

K

Electrical Characteristics

Sym

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

R

1

f

T

DIMENSIONS

Parameter

Collector-Base Breakdown Voltage

(I

C

=50uA, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

C

=1mA, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=50uA, I

C

=0)

Collector Cut-off Current

(V

CB

=50V, I

E

=0)

Emitter Cut-off Current

(V

EB

=4V, I

C

=0)

DC Current Gain

(V

CE

=5V, I

C

=1mA)

Collector-Emitter Saturation Voltage

(I

C

=10mA, I

B

=1mA)

Input Resistor

Transition Frequency

(V

CE

=10V, I

C

=-5mA, f=100MHz)

Min

50

5

---

100

---

7

---

Typ

---

300

---

10

250

Max

---

0.5

600

0.3

13

---

Unit

V

uA

---

V

KΩ

MHz

DIM

A

B

C

D

E

F

G

H

J

K

INCHES

MIN

MAX

.071

.087

.045

.053

.079

.087

.026 Nominal

.047

.055

.012

.016

.000

.004

.035

.039

.004

.010

.012

.016

MM

MIN

MAX

1.80

2.20

1.15

1.35

2.00

2.20

0.65Nominal

1.20

1.40

.30

.40

.000

.100

.90

1.00

.100

.250

.30

.40

NOTE

Suggested Solder

Pad Layout

0.70

0.90

1.90

0.65

www.mccsemi.com

Revision: 1

2005/06/29

DTC114TUAP Related Products

	DTC114TUAP	DTC114TUA
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN
Is it Rohs certified?	conform to	incompatible
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
Parts packaging code	SC-70	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Manufacturer packaging code	SOT323	SOT323
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e0
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz

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