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DN2535N8-G

Description
Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN, N8, SAME AS SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size545KB,6 Pages
ManufacturerSupertex
Environmental Compliance  
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DN2535N8-G Overview

Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN, N8, SAME AS SOT-89, 3 PIN

DN2535N8-G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSupertex
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)0.17 A
Maximum drain-source on-resistance25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)0.5 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DN2535/DN2540
N-Channel Depletion-Mode Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
The Supertex DN2535 and DN2540 are low threshold depletion-
mode (normally-on) transistors utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product marking for TO-243AA:
DN5D
where
= 2-week alpha date code
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
BV
DSX
/
BV
DGX
350V
R
DS(ON)
(max)
(min)
I
DSS
Package Options
TO-92
DN2535N3
DN2535N3-G
DN2540N3
DN2540N3-G
TO-220
DN2535N5
DN2535N5-G
DN2540N5
DN2540N5-G
TO-243AA
1
DN2535N8
DN2535N8-G
DN2540N8
DN2540N8-G
25Ω
150mA
400V
25Ω
150mA
-G indicates package is RoHS compliant (‘Green’)
1
Same as SOT-89.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Pin Configurations
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
D G S
G D S
G
D
S
TO-92
(front view)
TO-220
(front view)
TO-243AA
(top view)

DN2535N8-G Related Products

DN2535N8-G DN2540N3P003 DN2535N8 DN2535N3P003
Description Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN, N8, SAME AS SOT-89, 3 PIN Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, N3, 3 PIN Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, N8, SAME AS SOT-89, 3 PIN Small Signal Field-Effect Transistor, 0.12A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, N3, 3 PIN
Is it Rohs certified? conform to incompatible incompatible incompatible
Parts packaging code SOT-89 TO-92 SOT-89 TO-92
package instruction SMALL OUTLINE, R-PSSO-F3 CYLINDRICAL, O-PBCY-W3 SMALL OUTLINE, R-PSSO-F3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW THRESHOLD HIGH INPUT IMPEDANCE LOW THRESHOLD HIGH INPUT IMPEDANCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (ID) 0.17 A 0.12 A 0.17 A 0.12 A
Maximum drain-source on-resistance 25 Ω 25 Ω 25 Ω 25 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-243AA TO-92 TO-243AA TO-92
JESD-30 code R-PSSO-F3 O-PBCY-W3 R-PSSO-F3 O-PBCY-W3
JESD-609 code e3 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND RECTANGULAR ROUND
Package form SMALL OUTLINE CYLINDRICAL SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES NO
Terminal surface Matte Tin (Sn) TIN LEAD TIN LEAD TIN LEAD
Terminal form FLAT WIRE FLAT WIRE
Terminal location SINGLE BOTTOM SINGLE BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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