D2053UKG4 datasheet, PDF - EEWORLD Datasheet

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D2053UKG4: DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DBC4, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size26KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2053UKG4 Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DBC4, 8 PIN

D2053UKG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	ROHS COMPLIANT, DBC4, 8 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
Maximum drain current (ID)	1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDMW-F8
JESD-609 code	e4
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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TetraFET

D2053UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

Tol.

.003

5°

.003

.005

.003

.001

.003

.020

max

.003

DBC4 Package

PIN 1 Source (Common) PIN 5 Source (Common)

PIN 2 Drain 1

PIN 3 Drain 2

PIN 6 Gate 2

PIN 7 Gate 1

PIN 4 Source (Common) PIN 8 Source (Common)

DIM

6.47

0.76

45°

0.76

1.14

2.67

11.73

8.43

7.92

0.20

0.64

0.30

3.25

2.11

6.35SQ

1.65

0.13

0.25

Tol.

0.08

5°

0.08

0.13

0.08

0.02

0.08

0.51

max

0.07

Inches

.255

.030

.045

.105

.462

.332

.312

.008

.025

.012

.128

.083

.250SQ

.065

.005

0.010

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

•

VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

* Per Side

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage *

Drain Current *

Storage Temperature

Maximum Operating Junction Temperature

15W

65V

±20V

–65 to 150°C

200°C

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Prelim. 9/00

D2053UKG4 Related Products

	D2053UKG4	D2053UK
Description	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DBC4, 8 PIN	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN
Is it Rohs certified?	conform to	conform to
package instruction	ROHS COMPLIANT, DBC4, 8 PIN	DBC4, 8 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V	65 V
Maximum drain current (ID)	1 A	1 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDMW-F8	R-CDMW-F8
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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