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D1208UKG4

Description
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, DK, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,5 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D1208UKG4 Overview

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, DK, 5 PIN

D1208UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionFLANGE MOUNT, R-CDFM-F4
Contacts5
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)20 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
D1208UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
D
5
4
B
(2 pls)
E
C
1
2
3
G (4 pls)
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 12.5V – 500MHz
PUSH–PULL
FEATURES
O
H
J
I
M
N
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
5.08
24.76
1.52
0.81R
0.10
2.16
12.80
Tol.
0.13
0.13
0.76
0.13
0.13
0.13
max
0.13
0.13
0.13
0.02
0.13
max
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.200
0.975
0.060
0.032R
0.004
0.085
0.504
Tol.
0.005
0.005
0.03
0.005
0.005
0.005
max
0.005
0.005
0.005
0.001
0.005
max
PIN 4
DRAIN 1
GATE 2
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation
Drain – Source Breakdown Voltage*
Gate – Source Breakdown Voltage*
Drain Current*
Storage Temperature
Maximum Operating Junction Temperature
175W
40V
±20V
20A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 3204
Issue 3

D1208UKG4 Related Products

D1208UKG4
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC, DK, 5 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
package instruction FLANGE MOUNT, R-CDFM-F4
Contacts 5
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Shell connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 40 V
Maximum drain current (ID) 20 A
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4
JESD-609 code e4
Number of components 2
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
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