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D44C11

Description
Bipolar Transistors;NPN;4A;80V;TO-220
File Size208KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

D44C11 Overview

Bipolar Transistors;NPN;4A;80V;TO-220

D44C11 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistors
DESCRIPTION
·Low
Saturation Voltage
·Good
Linearity of h
FE
·Fast
Switching Speeds
·Complement
to Type D45C11
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
90
80
5
4
6
1
30
150
-55~150
UNIT
V
V
V
A
A
A
W
D44C11
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
4.2
UNIT
℃/W
isc website:
www.iscsemi.cn
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