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DTC144TCARUG

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size671KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTC144TCARUG Overview

Small Signal Bipolar Transistor

DTC144TCARUG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
CREAT BY ART
DTC144 TM/TE/TUA/TCA/TSA
NPN Small Signal Transistor
Small Signal Product
Features
◇Built-in
bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit)
◇The
bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
◇Only
the on/off conditions need to be set for
operation, marking device design easy.
packing code and prefix "G" on date code.
Equivalent Circuit
Ordering Information (example)
Part No.
Package
Packing
DTC144 TM
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Maximum Ratings
Power Dissipation
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector-Emitter Voltage
Junction and Storage Temperature Range
Note 1:Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
No
DT t
Re
C1 c
44 om
TE m
en
/T
de
UA d
/T
CA
Packing
code
RM
Packing code
(Green)
RMG
Marking
96
Manufacture code
M0
SOT-723
8K / 7" Reel
◇Green
compound (Halogen free) with suffix "G" on
Type Number
Symbol
P
D
Value
TM
TE
TUA / TCA
200
TSA
300
Units
mW
V
V
V
100
150
V
CBO
V
EBO
I
C
50
50
5
V
CEO
100
mA
o
T
J
, T
STG
- 55 to + 150
C
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
R
1
f
T
Min
50
50
5
Typ
Max
Condtion
Units
V
V
V
μA
μA
V
KΩ
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Input Resistor
Transition Frequency
I
C
= 50μA , I
E
=0
I
C
= 1mA , I
B
=0
Collector-Emitter Breakdown Voltage
I
C
= 50μA , I
C
=0
V
EB
= 4V , I
C
=0
0.5
0.5
0.3
V
CB
= 50V , I
E
=0
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 5mA , I
B
= 0.5mA
V
CE
= 5V,I
C
= 1mA
100
300
47
600
32.9
61.1
V
CE
= 10V , I
E
=5mA , f=100MHz
250
MHz
Version:D13

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