TetraFET
D2254UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
B
E
D
8
1
7
6
3
4
2
C
R
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
I
P
H
G
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 6 Gate 2
PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
29W
40V
±20V
4A
–65 to 150°C
200°C
Prelim. 9/00
D2254UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 1GHz
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
1
0.36
10
40
20:1
40
Typ.
Max. Unit
V
2
2
7
mA
m
A
V
S
dB
%
—
TOTAL DEVICE
h
VSWR
C
iss
C
oss
C
rss
PER SIDE
V
DS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
24
20
2
pF
pF
pF
V
DS
= 12.5V V
GS
= 0
Reverse Transfer Capacitance V
DS
= 12.5V V
GS
= 0
Pulse Duration = 300
m
s , Duty Cycle
£
2%
* Pulse Test:
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 6.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 9/00
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