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D2082UKG4

Description
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size17KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance  
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D2082UKG4 Overview

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

D2082UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionFLANGE MOUNT, R-CDFM-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
D2082UK
ROHS COMPLIANT
MECHANICAL DATA
TetraFET
40W – 28V – 1.0GHz
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
G
(4
pls)
F
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
PIN 1
PIN 3
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.65R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
DRAIN 1
GATE 2
Tol.
0.005
0.005
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
H
J
I
M
N
PIN 5
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
m
C
iss
C
oss
C
rss
V
GS(th)match
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Matching Voltage
Between Sides
P
O
= 40W
F = 1GHz
V = 28V
I = 50mA
V = 28V
V = 20V
I = 10mA
V = 10V
T = 300µS
V
DS
= 0V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
V
GS
= -5V
I = 2A
1
65
Typ.
Max. Unit
V
2
1
7
mA
µA
V
mhos
pF
pF
pF
0.1
V
1.6
86
35
2
TOTAL DEVICE
I
DQ
= 1.6A
Thermal Resistance = 1.0 °C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96

D2082UKG4 Related Products

D2082UKG4
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
package instruction FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code compliant
ECCN code EAR99
Shell connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 65 V
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4
JESD-609 code e4
Number of components 2
Number of terminals 4
Operating mode ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON

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