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D2089UKG4

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size27KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D2089UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

D2089UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codecompliant
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.5 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRDB-F4
JESD-609 codee4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
D2089UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
H
B
4
3
1
G
(2 pls)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W – 28V – 2GHz
SINGLE ENDED
FEATURES
F
E
D
2
C
(2
p
ls)
A
• SIMPLIFIED AMPLIFIER DESIGN
GATE
DRAIN
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DIM
A
B
C
D
E
F
G
H
Millimetres
25.40
45°
0.76
5.21 DIA
1.02
0.13
3.18
3.18
Tol.
0.25
0.05
0.13
0.13
0.02
0.13
REF
Inches
1.00
45°
0.030
0.205
0.040
0.005
0.125
0.125
Tol.
0.010
0.002
0.005
0.005
0.001
0.005
REF
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
4W
65V
±20V
1A
–65 to 150°C
200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96

D2089UKG4 Related Products

D2089UKG4
Description UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
package instruction DISK BUTTON, O-CRDB-F4
Reach Compliance Code compliant
Other features LOW NOISE
Shell connection SOURCE
Configuration SINGLE
Minimum drain-source breakdown voltage 65 V
FET technology METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.5 pF
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code O-CRDB-F4
JESD-609 code e4
Number of components 1
Number of terminals 4
Operating mode ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape ROUND
Package form DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form FLAT
Terminal location RADIAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
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