D2089UKG4 datasheet, PDF - EEWORLD Datasheet

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D2089UKG4: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size27KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2089UKG4 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

D2089UKG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	compliant
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRDB-F4
JESD-609 code	e4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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TetraFET

D2089UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

(2 pls)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

1W – 28V – 2GHz

SINGLE ENDED

FEATURES

ls)

• SIMPLIFIED AMPLIFIER DESIGN

GATE

DRAIN

PIN 1

PIN 3

SOURCE

PIN 2

PIN 4

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

• SIMPLE BIAS CIRCUITS

DIM

Millimetres

25.40

45°

0.76

5.21 DIA

1.02

0.13

3.18

Tol.

0.25

5°

0.05

0.13

0.02

0.13

REF

Inches

1.00

45°

0.030

0.205

0.040

0.005

0.125

Tol.

0.010

5°

0.002

0.005

0.001

0.005

REF

• LOW NOISE

• HIGH GAIN

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from DC to 2 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

65V

±20V

–65 to 150°C

200°C

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 5/96

D2089UKG4 Related Products

	D2089UKG4	D2089UK
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to	conform to
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	compliant	compliant
Other features	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF	0.5 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4
JESD-609 code	e4	e4
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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