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2SA1858Q

Description
Small Signal Bipolar Transistor, 0.07A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92NL-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA1858Q Overview

Small Signal Bipolar Transistor, 0.07A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92NL-A1, 3 PIN

2SA1858Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.07 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
Transistor
2SA1858
Silicon PNP epitaxial planer type
For general amplification
5.0±0.2
4.0±0.2
Unit: mm
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–300
–300
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
1 2 3
1.27
0.45
–0.1
1.27
+0.15
13.5±0.5
0.7±0.1
0.7±0.2
8.0±0.2
s
Features
0.45
–0.1
+0.15
2.3±0.2
W
˚C
˚C
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100µA, I
B
= 0
I
E
= –1µA, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
50
7
min
–300
–5
30
150
– 0.6
V
MHz
pF
typ
max
Unit
V
V
*
h
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
h
FE
Rank
1
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