GSOT03 thru GSOT36C
New Product
Vishay Semiconductors
formerly General Semiconductor
Miniature Transient Voltage Suppressors
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.031 (0.8)
Top View
0.079 (2.0)
0.035 (0.9)
0.037 (0.95)
Dimensions in inches
and (millimeters)
0.037 (0.95)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
GS0Txx
.045 (1.15)
.037 (0.95)
GS0TxxC
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Top
View
Single
Dual
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Terminals:
Solderable per MIL-STD-750, method 2026
High temperature Soldering Guaranteed:
230°C for 10 seconds.
Packaging Codes – Options:
E8 – 10K per 13” reel (8mm tape)
E9 – 3K per 7” reel (8mm tape)
Features
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs)
• Bidirectional or unidirectional configurations available
• Devices with a "C" suffix have dual diodes, which
can protect two unidirectional lines with pin 3 used
as a common anode connection, or a single
bidirectional line between pins 1 & 2.
• Ideal for ESD Protection
Maximum Ratings and Thermal Characteristics
Parameter
Peak Power Dissipation
(1)
for 8/20µs pulse
Forward Surge Current for single 8.3ms half sine wave
Operating and Storage Temperature Range
(T
A
= 25°C unless otherwise noted)
Symbol
P
pk
I
FSM
T
J,
T
stg
Value
300
10
–55 to +150
Unit
W
A
°C
Notes:
(1) Nonrepetitive current pulse and derate above T
A
= 25°C. For GSOT03, GSOT03C, GSOT04, GSOT04C the peak power dissipation is 270W.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
Document Number 88347
20-Jun-02
www.vishay.com
1
GSOT03 thru GSOT36C
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Part
Number
(1)
Device
Marking
Code
(T
J
= 25°C unless otherwise noted)
Rated
Stand-off
Voltage
V
WM
Volts
Minimum
Breakdown
Voltage
@1mA
V
(BR)
Volts
4.0
4.5
5.0
5.0
6.0
6.0
8.5
8.5
13.3
13.3
16.7
16.7
26.7
26.7
40
40
Maximum
Clamping
Voltage
@I
P
= 1A
(2)
V
C
Volts
6.5
7.0
8.5
8.5
9.8
9.8
13.4
13.4
19.0
19.0
24.0
24.0
43.0
43.0
60.0
60.0
Maximum
Clamping
Voltage
@I
P
= 5A
(2)
V
C
Volts
7.5
9.0
10.5
10.5
12.5
12.5
15.0
15.0
28.0
28.0
35.0
35.0
60.0
60.0
75.0
75.0
Maximum
Leakage
Current
@V
WM
I
D
µA
125
125
125
125
100
100
10
10
2
2
1
1
1
1
1
1
Maximum
Capacitance
@0V, 1MH
Z
C
pF
800
600
800
600
550
400
400
350
185
150
140
100
83
63
80
60
GSOT03
GSOT03C
GSOT04
GSOT04C
GSOT05
GSOT05C
GSOT08
GSOT08C
GSOT12
GSOT12C
GSOT15
GSOT15C
GSOT24
GSOT24C
GSOT36
GSOT36C
03
03C
04
04C
05
05C
08
08C
12
12C
15
15C
24
24C
36
36C
3.3
3.3
4.0
4.0
5.0
5.0
8.0
8.0
12.0
12.0
15.0
15.0
24.0
24.0
36.0
36.0
Note:
(1) Part numbers with a “C” suffix are bidirectional devices (dual junction)
(2) 8/20µs waveform used (see figure 2)
www.vishay.com
2
Document Number 88347
20-Jun-02
GSOT03 thru GSOT36C
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Non-Repetitive Peak Pulse Power
vs. Pulse Time
10000
P
PPM
— Peak Pulse Power (W)
1000
300W, 8/20µs waveshape
100
10
0.1
1.0
10
100
1000
10000
td — Pulse Duration (µs)
Fig. 2 – Pulse Waveform
110
100
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Fig. 3 – Power Derating Curve
Peak Pulse Power
8/20µs
80
I
PPM
— Peak Pulse Current, % I
RSM
100
90
80
70
60
50
40
30
20
10
0
% Of Rated Power
60
t
d
= I
PP
2
40
20
Average Power
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
t — Time (µs)
T
L
— Lead Temperature
°C
Document Number 88347
20-Jun-02
www.vishay.com
3
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