ASMT-QWBC-Nxxxx
Super 0.5W Cool White Power PLCC-4
Surface Mount LED Indicator
Data Sheet
Description
The Super 0.5W Cool White Power PLCC-4 SMT LED is
Cool white mid-Power PLCC-4 SMT LEDs using InGaN chip
technology. The package can be driven at high current
due to its superior package design. The product is able to
dissipate the heat more efficiently compared to the Power
PLCC-4 SMT LEDs. These LEDs produce higher light output
with better flux performance compared to the Power
PLCC-4 SMT LED.
The Super 0.5W Cool White Power PLCC-4 SMT LEDs are
designed for higher reliability, better performance, and
operate under a wide range of environmental conditions.
The performance characteristics of these new mid-power
LEDs make them uniquely suitable for use in harsh condi-
tions such as in automotive applications, and in electronics
signs and signals.
To facilitate easy pick and place assembly, the LEDs are
packed in EIA-compliant tape and reel. Every reel is
shipped in single intensity and color bin, to provide close
uniformity.
Features
Industry Standard PLCC 4 platform (3.2x2.8x1.9mm)
High reliability package with enhanced silicone resin
encapsulation
High brightness with optimum flux performance using
InGaN chip technologies
Available in Cool White
Available in 8mm carrier tape & 7 inch reel
Low Thermal Resistance 40°C/W
Wide viewing angle at 120 degree
JEDEC MSL 2
Applications
1. Interior automotive
a. Instrument panel backlighting
b. Central console backlighting
c. Navigation and audio system backlighting
d. Dome/Map lighting
e. Push button backlighting
f. Puddle lamp
g. Glove compartment illumination
2. Exterior automotive
a. Number plate illumination
3. Electronic signs and signals
a. Decorative lighting
4. Office automation, home appliances,
equipment
a. Panel/button backlighting
b. Display backlighting
industrial
CAUTION:
ASMT-QWBC-Nxxxx LEDs are Class 2 ESD sensitive. Please observe appropriate precautions
during handling and processing. Refer to Avago Application Note AN-1142 for additional details.
Package Drawing
0.79 ± 0.3
2.8 ± 0.2
2.2 ± 0.2
A
A
1.9 ± 0.2
0.6 ± 0.3
1.15 ± 0.2
3.6 ± 0.2
3.2 ± 0.2
2.4
0.97
C
CATHODE
MARKING
C
0.7
Notes:
1. All Dimensions in millimeters.
2. Lead Polarity as shown in Figure 14.
3. Terminal Finish: Ag plating
4. Encapsulation material: Silicone resin
Figure 1. Package Drawing
Table 1. Device Selection Guide (T
J
= 25°C)
Luminous Flux,
V[1]
(lm)
Color
Cool White
Part Number
ASMT-QWBC-NHJ0E
ASMT-QWBC-NJK0E
Min. Flux
(lm)
25.5
33.0
Typ. Flux
(lm)
30.0
38.0
Max. Flux
(lm)
43.0
56.0
0.56 (TYP.)
0.41 (TYP.)
Test Current
(mA)
150
150
Dice Technology
InGaN
InGaN
Notes:
1.
V
is the total luminous flux output as measured with an integrating sphere at mono pulse conditions.
2. Tolerance = ±12%
Part Numbering System
ASMT- Q X
1
B C – N X
2
X
3
X
4
X
5
Packaging Option
Color Bin Selection
Max. Flux Bin Selection
Min. Flux Bin Selection
Color
W – Cool White
2
Table 2. Absolute Maximum Ratings (T
A
= 25°C)
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Power Dissipation
Reverse Voltage, V
R
@ 10 μA
Junction Temperature
Operating Temperature
Storage Temperature
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
ASMT-QWBC-Nxxxx
150 mA
300 mA
570 mW
4
125°C
-40°C to +120°C
-40°C to +120°C
Table 3. Optical Characteristics (T
J
= 25°C)
Typical Chromaticity
Coordinates
x
0.31
Color
Cool White
Part Number
ASMT-QWBC-Nxxxx
Dice
Technology
InGaN
Viewing
Angle 2
½[1]
(Degrees)
Typ.
120
Luminous
Efficiency
e
(lm/W)
Typ.
59
Total Flux /
Luminous Intensity
V
(lm) / I
V
(cd)
Typ.
2.50
y
0.31
Notes:
1.
½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25°C)
Forward Voltage
V
F
(Volts) @ I
F
= 150 mA
Part Number
ASMT-QWBC-NxxxE
Typ.
3.4
Max.
3.8
Thermal
Resistance R
J-P
(°C/W)
40
3
FORWARD CURRENT - mA
430
480
530 580 630
WAVELENGTH - nm
680
730
780
RELATIVE INTENSITY
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
300
250
200
150
100
50
0
0
1
2
FORWARD VOLTAGE - V
3
4
Figure 2. Relative Intensity Vs. Wavelength
Figure 3. Forward Current Vs. Forward Voltage.
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100
150
200
DC FORWARD CURRENT - mA
250
300
NORMALIZED LUMINOUS FLUX.
(NORMALIZED AT 25°C)
1.6
RELATIVE LUMINOUS FLUX .
(NORMALIZED AT 150 mA)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
T
J
- JUNCTION TEMPERATURE - °C
100
Figure 4. Relative Flux vs. Forward Current
Figure 5. Relative Flux Vs. Temperature
160
140
120
CURRENT - mA
100
80
60
40
20
0
0
20
40
60
80
100
120
140
R
JA
= 90°C/W
R
JA
= 110°C/W
CURRENT - mA
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
TEMPERATURE (°C)
120
140
R
JP
= 40°C/W
Figure 6a. Maximum Forward Current Vs. Ambient Temperature. Derated
Based on T
JMAX
= 125°C, R
J-A
= 110°C/W & 90°C/W.
Figure 6b. Maximum Forward Current Vs. Solder Point Temperature. Derated
Based on T
JMAX
= 125°C, R
J-P
= 40°C/W.
4
0.40
D=
0.05
0.10
0.25
0.50
1
0.40
D=
0.30
CURRENT - A
t
p
T
t
p
I
F
T
D=
0.05
0.10
0.25
0.50
1
0.30
CURRENT - A
0.20
0.20
0.10
t
D=
p
T
1.00E-03
1.00E-01
t
p
- Time - (S)
t
p
I
F
T
1.00E+01
0.10
0.00
1.00E-05
0.00
1.00E-05
1.00E-03
1.00E-01
t
p
- Time - (S)
1.00E+01
Figure 7a. Maximum Pulse Current Vs. Ambient Temperature. Derated Based
on T
A
= 25°C, R
J-A
= 110°C/W.
Figure 7b. Maximum Pulse Current Vs. Ambient Temperature. Derated Based
on T
A
= 85°C, R
J-A
= 110°C/W.
0.010
FORWARD VOLTAGE SHIFT - V
250
300
0.005
COORDINATE SHIFT
0.000
Cx
-0.005
Cy
-0.010
-0.015
-0.020
100
150
200
FORWARD CURRENT - mA
Figure 8. Chromaticity Shift Vs. Forward Current
0
50
0.25
0.20
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
0
25
50
75
TJ - JUNCTION TEMPERATURE - °C
Figure 9. Forward Voltage Shift Vs. Temperature.
-50
-25
100
0.015
CHROMATICITY COORDINATE SHIFT
0.010
0.005
0.000
-0.005
-0.010
-0.015
-50
-25
100
125
Cx
Cy
NORMALIZED INTENSITY
0
25
50
75
T
J
- JUNCTION TEMPERATURE - °C
Figure 10. Chromaticity Shift Vs. Temperature
-30
0
30
60
ANGULAR DISPLACEMENT - DEGREES
Figure 11. Radiation Pattern
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
-60
90
5
Microchip MCU
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