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JANTX2N7330H

Description
Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

JANTX2N7330H Overview

Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN

JANTX2N7330H Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)78 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 1838  2161  1919  2697  2174  38  44  39  55  21 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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