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2N5210/MMBT5210
2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
C
BE
TO-92
B
E
SOT-23
Mark: 3M
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
50
50
4.5
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
2N5210
625
5.0
83.3
200
MMBT5210
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
2002 Fairchild Semiconductor Corporation
2N5210, Rev B
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 0.1 mA, I
E
= 0
V
CB
= 35 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
50
50
50
50
V
V
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 1.0 mA, V
CE
= 5.0 V
200
250
250
600
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.7
0.85
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= 500
µA,V
CE
= 5.0 V,
f= 20 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 20
µA,
V
CE
= 5.0 V,
R
S
= 22 kΩ, f = 10 Hz to 15.7 kHz
I
C
= 20
µA,
V
CE
= 5.0 V,
R
S
= 10 kΩ, f = 1.0 kHz
30
4.0
250
900
2.0
3.0
dB
dB
MHz
pF
3
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
1200
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
1000
Collector-Emitter Saturation
Voltage vs Collector Current
0.30
125 C
o
V
C E
= 5.0V
0.25
β
= 10
800
0.20
600
25 C
o
125 C
0.15
o
400
o
0.10
25 C
o
200
- 40 C
0.05
- 40 C
1
10
100
o
0
0.01
0.03
0.1
0.3
1
3
10
30
100
0.1
I
C
- COLLECTOR CURRENT (m A)
I
C
- COLLECTOR CURR EN T (m A)
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1.0
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1.0
- 40 C
0.8
o
0.8
- 40 C
25 C
o
o
0.6
25 C
125 C
o
o
0.6
125 C
0.4
o
0.4
β
= 10
0.2
0.1
1
10
100
0.2
0.1
1
V
C E
= 5.0V
10
I
C
- COLLECTO R CURRENT (mA)
I
C
- COLLECTO R CURRENT (m A)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
f = 1.0 MHz
CAPACITANCE (pF)
4
3
C te
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
5
3
2
2
1
0
C ob
125 MHz
100 MHz
75 MHz
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
CHARACTERIS TIC S RELATI VE TO VALUE AT T
A
= 25 C
Normalized Collector-Cutoff Current
vs Ambient Temperature
1000
Wideband Noise Frequency
vs Source Resistance
5
V
CE
= 5.0 V
°
NF - NOISE FIGURE (dB)
4
3
2
1
0
BANDWIDTH = 15.7 kHz
100
I
C
= 100
µ
A
I
C
= 30
µ
A
3
10
I
C
= 10
µ
A
2,000
5,000
10,000
20,000
50,000
100,000
1
25
50
75
100
125
T
A
- AMBIE NT TEMPERATURE (
°
C)
150
1,000
R
S
- SOURCE RESISTANCE (
Ω
)
Noise Figure vs Frequency
10
P
D
- POWER DISSIPATION (W)
NF - NOISE FIGURE (dB)
8
I
C
= 200
µ
A,
R
S
= 10 kΩ
Ω
I
C
= 100
µ
A,
R
S
= 10 kΩ
Ω
I
C
= 1.0 mA,
R
S
= 500
Ω
Base-Emitter Saturation
Voltage vs Collector Current
1.00
0.75
6
TO-92
0.50
4
I
C
= 1.0 mA,
R
S
= 5.0 kΩ
Ω
V
CE
= 5.0V
SOT-23
0.25
2
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
0.00
0
25
50
75
100
o
125
150
TEMPERATURE ( C)
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