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KSB811O

Description
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

KSB811O Overview

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN

KSB811O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-92S
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
KSB811
KSB811
Audio Frequency Power Amplifier
• Complement to KSD1021
• Collector Current : I
C
= -1A
• Collector Power Dissipation : P
C
=350mW
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-25
-5
-1.0
350
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100µA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -30V, I
E
=0
V
CE
= -1V, I
C
= -100mA
I
C
= -1A, I
B
= -0.1A
I
C
= -1A, I
B
= -0.1A
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, I
E
=0, f=1MHz
110
18
70
Min.
-30
-25
-5
-0.1
400
-0.5
-1.2
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

KSB811O Related Products

KSB811O KSB811G
Description Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code TO-92S TO-92S
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 25 V 25 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 70 200
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 110 MHz 110 MHz
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