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2SA1015(L)-Y

Description
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size168KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1015(L)-Y Overview

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SA1015(L)-Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instruction2-5F1B, SC-43, 3 PIN
Contacts3
Reach Compliance Codeunknow
Other featuresLOW NOISE
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA1015(L)
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
High voltage and high current: V
CEO
=
−50
V (min),
I
C
=
−150
mA (max)
Excellent h
FE
linearity: h
FE
(2) = 80 (typ.) at V
CE
=
−6
V, I
C
=
−150
mA
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
Complementary to 2SC1815 (L)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−50
400
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
Weight: 0.21 g (typ.)
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
V
CE (sat)
V
BE (sat)
f
T
C
ob
r
bb’
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
V
CE
= −6
V, I
C
= −150
mA
I
C
= −100
mA, I
B
= −10
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
f
=
1 MHz
V
CB
= −10
V, I
E
=
1 mA
f
=
30 MHz
V
CE
= −6
V, I
C
= −0.1
mA
f
=
100 Hz, R
G
=
10 kΩ
V
CE
= −6
V, I
C
= −0.1
mA
f
=
1 kHz, R
G
=
10 kΩ
Min
70
25
80
Typ.
80
−0.1
4
30
0.5
0.2
Max
−0.1
−0.1
400
−0.3
−1.1
7
6
dB
3
V
V
MHz
pF
Ω
Unit
μA
μA
Note: h
FE (1)
classification O: 70~140, Y: 120~240, GR: 200~400
1
2007-11-01

2SA1015(L)-Y Related Products

2SA1015(L)-Y 2SA1015(L)-GR 2SA1015(L)-O
Description TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92
package instruction 2-5F1B, SC-43, 3 PIN 2-5F1B, SC-43, 3 PIN 2-5F1B, SC-43, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 200 70
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1
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