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2SA1015-O

Description
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size184KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1015-O Overview

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

2SA1015-O Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instruction2-5F1B, SC-43, 3 PIN
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA1015
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current: V
CEO
=
−50
V (min),
I
C
=
−150
mA (max)
Excellent h
FE
linearity: h
FE (2)
= 80 (typ.) at V
CE
=
−6
V, I
C
=
−150
mA
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.) (f = 1 kHz)
Complementary to 2SC1815.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−50
400
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
V
CE (sat)
V
BE (sat)
f
T
C
ob
r
bb’
NF
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
V
CE
= −6
V, I
C
= −150
mA
I
C
= −100
mA, I
B
= −10
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −10
V, I
E
=
1 mA, f
=
30 MHz
V
CE
= −6
V, I
C
= −0.1
mA, R
G
=
10 kΩ,
f
=
1 kHz
Min
70
25
80
Typ.
80
−0.1
4
30
1.0
Max
−0.1
−0.1
400
−0.3
−1.1
7
10
V
V
MHz
pF
Ω
dB
Unit
μA
μA
Note: h
FE (1)
classification O: 70~140, Y: 120~240, GR: 200~400
1
2007-11-01
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