Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・High
DC current gain
・Excellent
safe operating area
APPLICATIONS
・Designed
for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6359
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
固电
IN
导½
半
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
100
80
7
16
30
4
UNIT
V
V
V
A
A
A
W
℃
℃
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6359
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdwon voltage
I
C
=0.2A ;I
B
=0
80
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=8A ;I
B
=0.8A
1.4
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=16A; I
B
=3.2A
4.0
V
V
BE
Base-emitter on voltage
I
C
=8A ; V
CE
=4V
2.2
V
I
CEO
Collector cut-off current
V
CE
=80V; I
B
=0
V
CE
=100V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
2.0
2.0
10.0
5.0
mA
I
CEX
Collector cut-off current
mA
I
EBO
Emitter cut-off current
h
FE-1
h
FE-2
固电
IN
DC current gain
导½
半
mA
I
C
=8A ; V
CE
=4V
DC current gain
f
T
Transition freuqency
ANG
CH
MIC
E SE
I
C
=16A ; V
CE
=4V
I
C
=1A ; V
CE
=4V
OR
UCT
ND
O
15
60
5
0.2
MHz
2
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