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2N7334

Description
Power Field-Effect Transistor, 0.6A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14
CategoryDiscrete semiconductor    The transistor   
File Size34KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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2N7334 Overview

Power Field-Effect Transistor, 0.6A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14

2N7334 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionIN-LINE, R-CDIP-T14
Contacts14
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)0.6 A
Maximum drain current (ID)0.6 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CDIP-T14
JESD-609 codee0
Humidity sensitivity level1
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.4 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 691, REV. A
2N7334
HERMETIC POWER MOSFET
N-CHANNEL QUAD
DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP.
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
A
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
θJC
P
D
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
0.6
4.0
4.0
+150
17
1.4
UNITS
Volts
Amps
Amps(pk)
°C
°C/W
Watts
V
GS
=10V, T
C
= 25°C
V
GS
=10V, T
C
= 100°C
PULSED DRAIN CURRENT
@ T
C
= 25°C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE JUNCTION TO CASE
(PER FET)
TOTAL DEVICE DISSIPATION @ T
C
= 25°C (PER FET)
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250µA
DRAIN TO SOURCE ON STATE RESISTANCE
I
D
= 0.6A, V
GS
= 10V@T
J
= 25°C
FORWARD TRANSCONDUCTANCE
V
DS
15Vdc, I
DS
= 0.6A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x max rating, Vdc, V
GS
= 0Vdc
V
GS
= 0Vdc, T
J
= 125°C
GATE THRESHOLD VOLTAGE V
DS
=V
GS
, I
D
=250µA
GATE TO BODY LEAKAGE CURRENT
V
GS
=
±20Vdc,
V
DS
= 0Vdc
TOTAL GATE CHARGE
(V
GS
= 10 Vdc,
GATE TO SOURCE CHARG
V
DS
= 0.5 x max. rating,
GATE TO DRAIN CHARGE
I
D
= 1.0Adc)
TURN ON DELAY TIME
(V
DD
= 50V,
RISE TIME
I
D
= 1.0Adc,
TURN OFF DELAY TIME
R
G
= 24Ω)
FALL TIME
FORWARD VOLTAGE,
(I
S
= 1.0Adc, V
GS
= 0V)
REVERSE RECOVERY TIME (I
F
= 1.0Adc, V
DD
50Vdc
REVERSE RECOVERY CHARGE
di/dt = 100A/µsec)
INPUT CAPACITANCE
(V
DS
= 25 Vdc,
OUTPUT CAPACITANCE
V
GS
= 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
BV
DSS
100
-
-
Volts
S(1/Ω)
µA
25
250
4
+100
-100
15
7.5
7.5
20
25
40
40
1.5
200
0.83
-
R
DS(ON)
g
fs
-
0.86
-
-
-
-
0.7
-
I
DSS
V
GS(TH)
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
180
82
15
V
nA
nC
nsec
Volts
nsec
µC
pF
•221
WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798•
World Wide Web Site - www.sensitron.com
E-mail Address - sales@sensitron.com

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