2N7334 datasheet, PDF - EEWORLD Datasheet

2N7334: DescriptionPower Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,; CategoryDiscrete semiconductor The transistor; File Size225KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	75 mJ
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
Maximum drain-source on-resistance	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-036AB
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.4 W
Maximum pulsed drain current (IDM)	4 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2N7334	2N7334PBF
Description	Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,	Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,
Is it Rohs certified?	incompatible	conform to
Reach Compliance Code	compli	compli
Avalanche Energy Efficiency Rating (Eas)	75 mJ	75 mJ
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	1 A	1 A
Maximum drain-source on-resistance	0.7 Ω	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-036AB	MO-036AB
JESD-30 code	R-CDIP-T14	R-CDIP-T14
Number of components	4	4
Number of terminals	14	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	4 A	4 A
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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